FABRICATION METHOD FOR SEMICONDUCTOR DEVICE USING METAL ALUMINUM NITRIDE

摘要

PURPOSE: A method for manufacturing a semiconductor device using a metal aluminum nitride is provided to easily secure the space for subsequent processes within a trench by controlling the composition ratio of a film using one film. CONSTITUTION: A substrate(2) includes a first area(I) and a second area(II). An interlayer insulating film(3) including a first trench(8) and a second trench(9) is formed on the substrate. A first gate insulating film(201) is formed on the upper surface of the interlayer insulating film. A work function controlling film(203) is formed on the first gate insulating film. A first metal gate electrode is formed to fill the first trench. A second metal gate electrode is formed to fill the second trench.