SEMICONDUCTOR DEIVCES HAVING A VARIABLE RESISTOR AND METHODS OF FABRICATING THE SAME
摘要
<p>PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to prevent atoms inside a contact plug from moving by protecting a contact plug during a mold opening portion. CONSTITUTION: A substrate includes a first area(50) and a second area(60). A mold dielectric layer(130) is arranged on a front side of the substrate. A contact plug(140) is arranged in the contact hole passing through the mold dielectric layer within the first area. A variable resistor(155a) is arranged within a mold opening portion passing through the mold dielectric layer within the second area. An upper side of the contact plug is arranged on a level lower than or substantially equal to the upper side of the mold dielectric layer.</p>
申请公布号
KR20120088027(A)
申请公布日期
2012.08.08
申请号
KR20100100466
申请日期
2010.10.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHOI, SUK HUN;YOON, BO UN;AHN, KEVIN;YUN, DOO SUNG