发明名称 |
MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region |
摘要 |
A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient α in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient α in the magnetization switching region 13. |
申请公布号 |
US8238135(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20080529387 |
申请日期 |
2008.01.15 |
申请人 |
SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NUMATA HIDEAKI;NEC CORPORATION |
发明人 |
SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NUMATA HIDEAKI |
分类号 |
G11C19/00 |
主分类号 |
G11C19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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