发明名称 |
Electronic device including a magneto-resistive memory device and a process for forming the electronic device |
摘要 |
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer. |
申请公布号 |
US8236578(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US201213358231 |
申请日期 |
2012.01.25 |
申请人 |
MATHER PHILLIP G.;AGGARWAL SANJEEV;BUTCHER BRIAN R.;DAVE RENU W.;MANCOFF FREDERICK B.;RIZZO NICHOLAS D.;EVERSPIN TECHNOLOGIES, INC. |
发明人 |
MATHER PHILLIP G.;AGGARWAL SANJEEV;BUTCHER BRIAN R.;DAVE RENU W.;MANCOFF FREDERICK B.;RIZZO NICHOLAS D. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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