发明名称 Semiconductor device
摘要 A semiconductor device includes a substrate over which a circuit is formed, a multi-layer wiring layer having a plurality of wiring layers formed over the substrate and a pad formed in a predetermined location of an uppermost layer of the wiring layers, a new pad provided in an appropriate location over the multi-layer wiring layer, and a redistribution layer provided with a redistribution line coupling the new pad and the pad. In the semiconductor device: the multi-layer wiring layer includes a signal line for transmitting an electric signal to the circuit and a ground line provided in a wiring layer between the redistribution line or the new pad and the circuit; the ground line is formed to correspond to a location where the new pad is assumed to be located and a route along which the redistribution line is assumed to be formed; and the redistribution line is formed along at least a portion of the ground line.
申请公布号 US8237287(B2) 申请公布日期 2012.08.07
申请号 US20110929968 申请日期 2011.02.28
申请人 TADA YUJI;HIRAKAWA TSUYOSHI;NAKAMURA HIRONORI;KUROKAWA TAKAYUKI;RENESAS ELECTRONICS CORPORATION 发明人 TADA YUJI;HIRAKAWA TSUYOSHI;NAKAMURA HIRONORI;KUROKAWA TAKAYUKI
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
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