Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor

摘要

Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.