发明名称 |
Nanowire sensor, nanowire sensor array and method of fabricating the same |
摘要 |
A method of fabricating a sensor comprising a nanowire on a support substrate with a first semiconductor layer arranged on the support substrate is disclosed. The method comprises forming a fin structure from the first semiconductor layer, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing at least the fin portion of the fin structure thereby forming the nanowire being surrounded by a first layer of oxide; and forming an insulating layer above the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel. A nanowire sensor is also disclosed. The nanowire sensor comprises a support substrate, a semiconducting fin structure arranged on the support substrate, the fin structure comprising at least two semiconducting supporting portions and a nanowire arranged there between; and a first insulating layer on a contact surface of the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel.
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申请公布号 |
US8236595(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100376993 |
申请日期 |
2010.05.11 |
申请人 |
AGARWAL AJAY;SINGH NAVAB;KUMAR RAKESH;LAO IENG KIN;BALASUBRAMANIAN NARAYANAN;AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
AGARWAL AJAY;SINGH NAVAB;KUMAR RAKESH;LAO IENG KIN;BALASUBRAMANIAN NARAYANAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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