Semiconductor device including a transistor and a capacitor having multiple insulating films

摘要

A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-dielectric constant film of a high-k material having a dielectric constant of 10 or more, performing liftoff so that the high-dielectric-constant film remains on the lower electrode, and forming an upper electrode on the high-dielectric-constant film remaining after the liftoff.