发明名称 |
Apparatus having a lanthanum-metal oxide semiconductor device |
摘要 |
Lanthanum-metal oxide dielectrics and methods of fabricating such dielectrics provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum-metal oxide dielectric is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor. Additional apparatus, systems, and methods are disclosed. |
申请公布号 |
US8237216(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100915578 |
申请日期 |
2010.10.29 |
申请人 |
AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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