发明名称 |
Memory cell with silicon-containing carbon switching layer and methods for forming the same |
摘要 |
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal (MIM) stack, the MIM stack including (a) a first conductive carbon layer; (b) a low-hydrogen, silicon-containing carbon layer above the first conductive carbon layer; and (c) a second conductive carbon layer above the low-hydrogen, silicon-containing carbon layer; and (2) forming a steering element coupled to the MIM stack. Numerous other aspects are provided. |
申请公布号 |
US8237146(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100711810 |
申请日期 |
2010.02.24 |
申请人 |
KREUPL FRANZ;ZHANG JINGYAN;XU HUIWEN;SANDISK 3D LLC |
发明人 |
KREUPL FRANZ;ZHANG JINGYAN;XU HUIWEN |
分类号 |
H01L47/00;H01L21/00;H01L21/02;H01L21/20;H01L27/108;H01L29/94 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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