发明名称 |
Polysilicon plug bipolar transistor for phase change memory |
摘要 |
Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar junction transistors are arranged in a common collector configuration and include an emitter comprising doped polysilicon having a first conductivity type, the emitter contacting a corresponding word line in a plurality of word lines to define a pn junction. The bipolar junction transistors include a portion of the corresponding word line underlying the emitter acting as a base, and a collector comprising a portion of the single-crystalline substrate underlying the base. |
申请公布号 |
US8237144(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US201113252152 |
申请日期 |
2011.10.03 |
申请人 |
LUNG HSIANG-LAN;LAI ERH-KUN;RAJENDRAN BIPIN;LAM CHUNG H.;MACRONIX INTERNATIONAL CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LUNG HSIANG-LAN;LAI ERH-KUN;RAJENDRAN BIPIN;LAM CHUNG H. |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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