发明名称 Method and system for tilting a substrate during gas cluster ion beam processing
摘要 A method and system for treating a non-planar structure is described. The method includes forming a non-planar structure on a substrate. Additionally, the method includes generating a gas cluster ion beam (GCIB) formed from a material source for treatment of the non-planar structure, tilting the substrate relative to the GCIB, and irradiating the non-planar structure with the GCIB. The system includes a substrate tilt actuator coupled to a substrate holder and configured to tilt the substrate holder relative to a GCIB.
申请公布号 US8237136(B2) 申请公布日期 2012.08.07
申请号 US20090575931 申请日期 2009.10.08
申请人 HAUTALA JOHN J.;RUSSELL NOEL;TEL EPION INC. 发明人 HAUTALA JOHN J.;RUSSELL NOEL
分类号 G01J5/00 主分类号 G01J5/00
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