发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area.
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申请公布号 |
US8237219(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100877882 |
申请日期 |
2010.09.08 |
申请人 |
USUJIMA AKIHIRO;SATOH SHIGEO;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
USUJIMA AKIHIRO;SATOH SHIGEO |
分类号 |
H01L27/088;H01L21/336;H01L29/78 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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