发明名称 |
Method of making diode having reflective layer |
摘要 |
A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. |
申请公布号 |
US8236585(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100841674 |
申请日期 |
2010.07.22 |
申请人 |
YOO MYUNG CHEOL;LG ELECTRONICS INC. |
发明人 |
YOO MYUNG CHEOL |
分类号 |
H01L21/00;H01L33/00;H01L33/46 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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