| 摘要 |
PURPOSE: An electric charge-integration multiple linear image sensor is provided to optimize direct transmission of electric charges by having a large freedom degree in a doping level of the semiconductive regions. CONSTITUTION: A pixel includes insulated gates. The gates are consecutively formed on a semiconductive layer. The gates cover the semiconductive layer. The gates are separated by gaps. Superficial layer regions(16) are maintained on the same reference potential. |
