发明名称 Cell array of semiconductor memory device and a method of forming the same
摘要 A cell array includes a semiconductor substrate including an active region comprising a first region, a second region, and a transition region, the second region being separated from the first region by the transition region, wherein a top surface of the second region is at a different level than a top surface of the first region. The cell array also includes a plurality of word lines crossing over the first region. The cell array also includes a selection line crossing over the active region, wherein at least a portion of the selection line is located over the transition region.
申请公布号 US8237199(B2) 申请公布日期 2012.08.07
申请号 US20100850677 申请日期 2010.08.05
申请人 SEL JONG-SUN;CHOI JUNG-DAL;KANG CHANG-SEOK;LEE CHANG-HYUN;LEE JANG-SIK;KIM VIE-NA;SAMSUNG ELECTRONICS CO., LTD. 发明人 SEL JONG-SUN;CHOI JUNG-DAL;KANG CHANG-SEOK;LEE CHANG-HYUN;LEE JANG-SIK;KIM VIE-NA
分类号 H01L29/94 主分类号 H01L29/94
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