发明名称 |
Method of forming a precursor solution for metal organic deposition and method of forming superconducting thick film using the same |
摘要 |
A method for forming a precursor solution for metal organic deposition includes dissolving an additive-free first precursor composed of a rare earth element, a second precursor comprising barium, and a third precursor composed of copper into an acid to form a compound solution; dissolving the compound solution into a solvent to form a pre-precursor solution; and evaporating the solvent from the pre-precursor solution to form a precursor solution having an increased viscosity; wherein at least one of the first precursor, the second precursor, and the third precursor is dissolved into a fluorine-free acid. A method for forming a superconducting thick film from the above precursor solution includes forming a thick film by a one-time coating of the precursor solution having an increased viscosity onto a biaxially-textured base followed by heat treating to form the superconducting thick film having a thickness of about 0.2 μm or more and having no cracking. |
申请公布号 |
US8236733(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20090506189 |
申请日期 |
2009.07.20 |
申请人 |
YOO SANG-IM;MOON SEUNG-HYUN;SHIN GEO-MYUNG;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;SUNAM CO., LTD. |
发明人 |
YOO SANG-IM;MOON SEUNG-HYUN;SHIN GEO-MYUNG |
分类号 |
H01L39/24;B05D5/12;C09D5/24 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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