MEMORY OF USING RESISTIVE SWITCHING DEVICE AND METHOD OF OPERATING THE SAME

摘要

PURPOSE: A memory using a resistive switching device and an operating method thereof are provided to control a signal transmission path by changing resistance. CONSTITUTION: A variable resistive switching unit(200) implements a high or low resistance state by an applied bias. In case of the high resistance state, data storage unit(300) is electrically disconnected to a selection wire. In case of the low resistance state, the data storage unit is electrically connected to the selection wire. When the data storage unit is electrically connected to the selection wire, a writing operation and a reading operation are performed. After the writing operation or reading operation is performed, a variable resistive switching unit is changed to the high resistance state.