发明名称 |
Nonvolatile memory device with recording layer having two portions of different nitrogen amounts |
摘要 |
According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion. |
申请公布号 |
US8237145(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US20100858975 |
申请日期 |
2010.08.18 |
申请人 |
KAMATA CHIKAYOSHI;TSUKAMOTO TAKAYUKI;KUBO KOHICHI;AOKI SHINYA;HIRAI TAKAHIRO;HIRAOKA TOSHIRO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KAMATA CHIKAYOSHI;TSUKAMOTO TAKAYUKI;KUBO KOHICHI;AOKI SHINYA;HIRAI TAKAHIRO;HIRAOKA TOSHIRO |
分类号 |
H01L29/04;H01L23/58 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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