发明名称 NON-VOLATILE MEMORY AND METHOD WITH POST-WRITE READ AND ADAPTIVE RE-WRITE TO MANAGE ERRORS
摘要 Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. The memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. Input data is written and staged in the first portion before being copied to the second portion. An error management provides checking the quality of the copied data for excessive error bits. The copying and checking are repeated on a different location in the second portion until either a predetermined quality is satisfied or the number or repeats exceeds a predetermined limit. The error management is not started when a memory is new with little or no errors, but started after the memory has aged to a predetermined amount as determined by the number of erase/program cycling its has experienced.
申请公布号 KR20120087948(A) 申请公布日期 2012.08.07
申请号 KR20127012741 申请日期 2010.10.22
申请人 SANDISK TECHNOLOGIES, INC. 发明人 DUSIJA GAUTAM ASHOK;CHEN JIAN;AVILA CHRIS;HUANG JIANMIN;GAVENS LEE M.
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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