| 摘要 |
<p>PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to improve data retention power and durability and to obtain device reliability by controlling thermal interference between neighboring memory cells. CONSTITUTION: A plurality of memory cells(MC1,MC2) includes a nonvolatile storage element(SE). The plurality of memory cells is arranged in an array shape consisting of a plurality of rows and columns. A transistor(TR) is formed in an active area defined by an element isolation film(11). A memory film(ML) is electrically connected to source/drain regions(S/D) of the transistor through a contact pad(20C). Contact pads and via plugs(40V1,40V2) are electrically insulated by one or more insulating layers(20,30,40).</p> |
