| 摘要 |
PURPOSE: A light emitting device and a light emitting device package are provided to form various structures of a plurality of semiconductor layers included in a light emitting structure by regularly or irregularly forming doping concentration of a conductivity type dopant within a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. CONSTITUTION: A light emitting structure(120) is formed on a substrate(110). The light emitting structure comprises a first conductivity type semiconductor layer(122), an active layer(124), and a second conductivity type semiconductor layer(126). A first electrode(150) including a first electrode pad(152) is formed on the light emitting structure. A semiconductor oxide layer(130) is formed on the first electrode. A conductive layer(170) is formed on the second conductivity type semiconductor layer. A passivation layer(140) is formed between the semiconductor oxide layer and an exposed light emitting structure. |
