FABRICATING OF PHASE CHANGE RANDOM ACCESS MEMORY METHOD FOR FABRICATING

摘要

PURPOSE: A manufacturing method of a phase change memory device is provided to control generation of voids by including a single separation film which is formed into first to third separation films. CONSTITUTION: A plurality of phase change structures is formed on an upper portion of a semiconductor substrate(110). A first separation film is formed on the upper portion of the semiconductor substrate in order to be coated along a surface of the phase change structure. A second separation film(165) is formed on the upper portion of the semiconductor substrate on which the first separation film is formed. The first and second separation films are planarized in order to expose the surface of the phase change structure. A third separation film(167) is formed on the upper portion of the planarized semiconductor substrate.