| 摘要 |
<p>PURPOSE: A method for manufacturing a phase-change random access memory device is provided to reduce a failure rate by forming an upper electrode after residues of a phase change material are eliminated by forming a sacrificial oxide film. CONSTITUTION: A phase change material layer(240) is formed by depositing a phase change material inside a hole and an upper portion of an inter-layer insulating film(230). A sacrificial oxide(250) is coated on the upper portion of the phase change material layer and becomes heated. The phase change material layer is planarized. The coated sacrificial oxide film is removed from the inside of the hole. An upper electrode is formed by coating a conductive material for the upper electrode on the upper portion of the sacrificial oxide film.</p> |
