发明名称 |
Semiconductor device manufacturing method |
摘要 |
A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film. |
申请公布号 |
US8236639(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US201113071083 |
申请日期 |
2011.03.24 |
申请人 |
KIKUCHI HIROAKI;KONDO KATSUNORI;SHINOHARA SHIGERU;TAKAHASHI OSAMU;YAMABAYASHI TOMOAKI;MITSUMI ELECTRIC CO., LTD. |
发明人 |
KIKUCHI HIROAKI;KONDO KATSUNORI;SHINOHARA SHIGERU;TAKAHASHI OSAMU;YAMABAYASHI TOMOAKI |
分类号 |
H01L21/765;H01L21/8239 |
主分类号 |
H01L21/765 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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