Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

摘要

In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the substrate. Numerous other aspects are provided.