发明名称 |
Contact patterning method with transition etch feedback |
摘要 |
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole. |
申请公布号 |
US8236699(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US201113021842 |
申请日期 |
2011.02.07 |
申请人 |
JEON BYUNG-GOO;PARK SUNG-CHUL;EDLEMAN NIKKI;GUTMANN ALOIS;CHEN FANG;INFINEON NORTH;SAMSUNG ELECTRONICS CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;INFINEON TECHNOLOGIES AG |
发明人 |
JEON BYUNG-GOO;PARK SUNG-CHUL;EDLEMAN NIKKI;GUTMANN ALOIS;CHEN FANG |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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