| 摘要 |
The present invention provides a divided sputtering target obtained by joining a plurality of oxide semiconductor target members, whereby it is possible to effectively prevent the contamination of grown oxide semiconductor thin films by the material constituting a backing plate as a result of sputtering. The present invention is a divided sputtering target obtained by joining a plurality of target members made from oxide semiconductor on a backing plate by low-temperature soldering, wherein low-temperature solder that covers the backing plate surface is present in the gaps formed between the joined target members. The thickness of the low-temperature solder in the gaps is preferably 10% to 70% of the depth of the gaps formed between the target members. |
