| 摘要 |
PURPOSE: A dead zone amplifier is provided to improve a leakage cancellation ratio in tag signal amplification by selectively amplifying only a tag signal. CONSTITUTION: A dead zone amplifier comprises a main amplification part(1110), a secondary amplification part(1130), and an input/output isolation part(1150). The main amplification part outputs an output signal, which is formed by amplifying the input signal inputted to an input terminal, to an output terminal. The main amplification part includes a ninth transistor(M9) and a tenth transistor(M10). The secondary amplification part attenuates a signal which is amplified through the main amplification part a weak-inversion region. The secondary amplification part includes a fifth transistor(M5) and a sixth transistor(M6). A drain of the sixth transistor is connected to a source of an eighth transistor(M8) in the input/output isolation part. |
