发明名称 |
WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DIODE |
摘要 |
A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material. |
申请公布号 |
KR20120086731(A) |
申请公布日期 |
2012.08.03 |
申请号 |
KR20127016254 |
申请日期 |
2010.10.22 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
SIMONIAN DMITRI;BASIN GRIGORIY |
分类号 |
H01L33/50;H01L33/56;H01L33/64 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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