| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bi-section-type GaN-based semiconductor laser device with a configuration and a structure having a little occurrence of damage in a saturable absorption region. <P>SOLUTION: A semiconductor laser device includes a stack of a second compound semiconductor layer and a third compound semiconductor layer constituting a light-emitting region and a saturable absorption region, and has a stacked structure having a ridge stripe structure, a second electrode, and a first electrode. The second electrode is isolated by an isolation trench into a first portion passing a DC current into the light-emitting region and a second portion for applying electric field to the saturable absorption region. On both sides of the ridge stripe structure, second compound semiconductor layer exposed regions are provided. 1<L<SB POS="POST">2</SB>/L<SB POS="POST">1-ave</SB>is satisfied, where L<SB POS="POST">1-ave</SB>denotes the average distance from a portion of the third compound semiconductor layer constituting the light-emitting region to the top surface of the second compound semiconductor layer exposed region, and L<SB POS="POST">2</SB>denotes the distance from the portion of the third compound semiconductor layer to the top surface of the second compound semiconductor layer exposed region in the boundary between the second portion of the second electrode and the isolation trench. <P>COPYRIGHT: (C)2012,JPO&INPIT |
