| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element that prevents the occurrence of catastrophic optical damage (COD) even when it is driven under severe conditions and that has high reliability. <P>SOLUTION: A semiconductor laser element 1 according to the present invention comprises: window regions 23 including a mixed-crystal portion formed by diffusion of group III vacancies; and a non-window region 24 having an active layer 15 of a quantum well structure. The mixed-crystal portion is formed by providing accelerating films, which absorb predetermined atoms and accelerate the diffusion of the group III vacancies, on the window regions 23. A layer adjacent to the active layer 15 is doped with an impurity occupying a group V site. <P>COPYRIGHT: (C)2012,JPO&INPIT |
