发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To shorten a test time when conducting a disturbance test. <P>SOLUTION: In the semiconductor storage device, sense amplifiers SA1-SAn, a switch part YSW4, and an input/output control circuit IOC are activated for a test cell to read data out of the test cell first (process 1). Then, only the sense amplifiers SA1-SAn are activated for a disturbance cell (process 2). The sense amplifiers SA1-SAn, switch part YSW4, and input/output control circuit IOC are activated again for the test cell to read the data out of the test cell (process 3). In this semiconductor storage device, only the sense amplifiers SA1-SAn are activated in the process 2 for the disturbance cell without activating a column system (the switch part YSW4 and input/output control circuit IOC), so that a test time can be shortened as much as no read of the data from the disturbance cell. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012146365(A) 申请公布日期 2012.08.02
申请号 JP20110004462 申请日期 2011.01.13
申请人 RENESAS ELECTRONICS CORP 发明人 TASHIRO SHINYA
分类号 G11C29/12 主分类号 G11C29/12
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