SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the mutual difference in the plane direction of the opposite side walls extending in a direction parallel to the extending direction of a trench.

SOLUTION: A trench (2) is extended in the direction in which an interior angle with respect to an off-direction is 30° or -30° in a SiC semiconductor substrate (1) in which an off-angle is provided on a (0001) plane and the off-direction is set to the <11-20> direction. This prevents the mutual difference in the plane direction of the opposite side walls extending in a direction parallel to the extending direction of the trench (2), so that each of these side walls can substantially be the ä11-20} plane.

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