APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING REDUCED AMOUNT OF BORON COMPOUND BY VENTING SYSTEM WITH INERT GAS

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing polycrystalline silicon having a reduced amount of boron compounds.

SOLUTION: The apparatus feeds Ar gas in a trichlorosilane (TCS) line 22, which connects a trichlorosilane (TCS) tank 2a and a series of distillation units 4 to 6. The distillation units 4 to 6 have a pressure transducer 4e to 6e and a pressure independent control valve (PIC-V) 4f to 6f positioned on a vent gas line 26 for discharging vent gas from the distillation units 4 to 6. Ar gas is fed to the TCS line 22 with higher pressure than the pressure set for opening the PIC-V 4f to 6f. The TCS is distilled by the distillation units 4 to 6 with continuously discharging vent gas from the distillation units 4 to 6.

COPYRIGHT: (C)2012,JPO&INPIT