发明名称 |
SEMICONDUCTOR DEVICE CONDUCTIVE PATTERN STRUCTURES INCLUDING DUMMY CONDUCTIVE PATTERNS, AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Methods of forming conductive pattern structures form an insulating interlayer on a substrate that is partially etched to form a first trench extending to both end portions of a cell block. The insulating interlayer is also partially etched to form a second trench adjacent to the first trench, and a third trench extending to the both end portions of the cell block. The second trench has a disconnected shape at a middle portion of the cell block. A seed copper layer is formed on the insulating interlayer. Inner portions of the first, second and third trenches are electroplated with a copper layer. The copper layer is polished to expose the insulating interlayer to form first and second conductive patterns in the first and second trenches, respectively, and a first dummy conductive pattern in the third trench. Related conductive pattern structures are also described. |
申请公布号 |
US2012193792(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201113237514 |
申请日期 |
2011.09.20 |
申请人 |
KIM HEI-SEUNG;PARK IN-SUN;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG;HONG JONG-WON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HEI-SEUNG;PARK IN-SUN;CHOI GIL-HEYUN;PARK JI-SOON;LEE JONG-MYEONG;HONG JONG-WON |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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