发明名称 |
INTEGRATED CIRCUIT FABRICATION |
摘要 |
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width. |
申请公布号 |
US2012193777(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201213445797 |
申请日期 |
2012.04.12 |
申请人 |
TRAN LUAN C.;LEE JOHN;LIU ZENGTAO "TONY";FREEMAN ERIC;NIELSEN RUSSELL;MICRON TECHNOLOGY, INC. |
发明人 |
TRAN LUAN C.;LEE JOHN;LIU ZENGTAO "TONY";FREEMAN ERIC;NIELSEN RUSSELL |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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