发明名称 |
DEVICE AND METHOD OF REDUCING JUNCTION LEAKAGE |
摘要 |
A device and method for reducing junction leakage in a semiconductor junction includes forming a faceted raised structure in a source/drain region of the device. Dopants are diffused from the faceted raised structure into a substrate below the faceted raised structure to form source/drain regions. A sprinkle implantation is applied on the faceted raised structure to produce a multi-depth dopant profile in the substrate for the source/drain regions. |
申请公布号 |
US2012193710(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201213446602 |
申请日期 |
2012.04.13 |
申请人 |
CHENG KANGGOU;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGOU;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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