发明名称 |
Method of manufacturing back contact of e.g. solar cell, involves thermally spraying materials containing metal or alloy on back layer of wafer to form lower and upper layers, where materials have different melting temperatures |
摘要 |
<p>The method involves thermally spraying aluminum on back layer of crystalline silicon wafer (16) to form an aluminum layer (18) such that aluminum is applied over the entire surface of back layer. Materials containing metal or alloy are thermally sprayed on the back layer to form lower and upper layers (12,14), where the materials have different melting temperatures. The back layer is plated with tin. An independent claim is included for semiconductor device.</p> |
申请公布号 |
DE102011001799(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
DE20111001799 |
申请日期 |
2011.04.05 |
申请人 |
SCHOTT SOLAR AG |
发明人 |
REIME, SASCHA;VON CAMPE, HILMAR, DR.;SCHUM, BERTHOLD;METZ, AXEL, DR.;ROTH, PETER;MEIDEL, BERND |
分类号 |
H01L31/18;H01L21/285;H01L23/482 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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