| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent a contact failure between a connection contact and the side of the active area by comprising a sidewall oxide layer including a TEOS layer with a high etching rate. CONSTITUTION: A device isolation trench(115) is formed on a semiconductor substrate(100) to set an active area. A wet oxide layer(130) is formed on the sidewall and the bottom of a trench with a wet oxidation method. A TEOS layer(200) is deposited on the wet oxidation layer. A liner layer is formed by depositing a silicon nitride layer(205) and a silicon oxide layer(210) on the TEOS layer. A device isolation layer(215) fills the trench on the liner layer.
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