发明名称 |
Method of Depositing Material |
摘要 |
Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. One the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.
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申请公布号 |
US2012196440(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201113017015 |
申请日期 |
2011.01.30 |
申请人 |
BOTMAN AURELIEN PHILIPPE JEAN MACLOU;RANDOLPH STEVEN;TOTH MILOS;FEI COMPANY |
发明人 |
BOTMAN AURELIEN PHILIPPE JEAN MACLOU;RANDOLPH STEVEN;TOTH MILOS |
分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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