METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE,申请号WO2012JP51348-传众专利搜索

发明名称	METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要	This method for producing a semiconductor device having GaN (gallium nitride) configuring a semiconductor layer is provided with a gate insulating film formation step (F) for, using microwave plasma, forming on a nitride layer having GaN at least one film from among the group consisting of an SiO2 film and an Al2O3 film, and causing the formed film to be at least a portion of a gate insulating film.
申请公布号	WO2012102237(A1)	申请公布日期	2012.08.02
申请号	WO2012JP51348	申请日期	2012.01.23
申请人	TOHOKU UNIVERSITY;ADVANCED POWER DEVICE RESEARCH ASSOCIATION;TOKYO ELECTRON LIMITED;TERAMOTO, AKINOBU;KAMBAYASHI, HIROSHI;UEDA, HIROKAZU;MOROZUMI, YUICHIRO;HARADA, KATSUSHIGE;HASEBE KAZUHIDE;OHMI, TADAHIRO	发明人	TERAMOTO, AKINOBU;KAMBAYASHI, HIROSHI;UEDA, HIROKAZU;MOROZUMI, YUICHIRO;HARADA, KATSUSHIGE;HASEBE KAZUHIDE;OHMI, TADAHIRO
分类号	H01L29/78;H01L21/31;H01L21/316;H01L21/336;H01L21/338;H01L29/778;H01L29/786;H01L29/812	主分类号	H01L29/78
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