发明名称 |
MEMORY SUPPORT PROVIDED WITH MEMORY ELEMENTS OF FERROELECTRIC MATERIAL AND NON-DESTRUCTIVE READING METHOD THEREOF |
摘要 |
A method for non-destructive reading of logic data stored in a memory includes applying to a first wordline a reading voltage so as not to cause a variation of the stable state of polarization of a layer of ferroelectric material, and generating a difference of potential between first and second bitlines. An output current is generated comparing the output current with a plurality of comparison values, and determining the logic value of the logic data to be read on the basis of the comparison. |
申请公布号 |
US2012195095(A1) |
申请公布日期 |
2012.08.02 |
申请号 |
US201213362478 |
申请日期 |
2012.01.31 |
申请人 |
SCALIA ANTONIO MARIA;GRECO MAURIZIO;STMICROELECTRONICS S.R.I |
发明人 |
SCALIA ANTONIO MARIA;GRECO MAURIZIO |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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