HIGH-VOLTAGE RESISTANT LATERAL DOUBLE-DIFFUSED TRANSISTOR BASED ON NANOWIRE DEVICE

摘要

A high-voltage resistant lateral double-diffused transistor based on a nanowire device is provided. The lateral double-diffused metal oxide semiconductor(MOS) transistor includes a channel region (1), a gate dielectric (2), a gate region (3), a source region (7), a drain region (8), a source-terminal extension region (4) and a drain-terminal S-shape drift region (5), wherein the channel region (1) is a lateral cylindrical silicon nanowire structure which is covered by a layer of uniform gate dielectric (2), and the gate region (3) is on the gate dielectric (2), and the channel region (1) is surrounded by the gate region (3) and the gate dielectric (2) completely, the source-terminal extension region (4) is located between the source region (7) and the channel region (1), the drain-terminal S-shape drift region (5) is located between the drain region (8) and the channel region (1), and the top view of the drain-terminal S-shape drift region (5) is single or a plurality of S-shape structures, and insulating material with relative dielectric constant of 1~4 is filled in the S-shape structure. The high voltage resistant ability of the lateral double-diffused transistor based on a silicon nanowire MOS transistor is increased.