REACTOR FOR MANUFACTURING POLYCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON

摘要

At least one nozzle (3a) for supplying source gas and at least one pair of core wire holders (8) comprising a silicon core wire (5) are disposed on a bottom plate (1), a gas outlet part of the nozzle (3a) being disposed at a certain height from the upper end of the core wire holders (8). For example, at a point in time when the diameter of a silicon rod exceeds approximately 80 mm after a polycrystalline silicon precipitation reaction has started, the gas composition supplied through the nozzle (3a) is switched, and gas having a relatively low temperature is supplied through the nozzle (3a). By efficiently cooling an area where the temperature of gas easily rises and gas easily accumulates, the temperature distribution within a reactor may be made uniform, and the production of silicon powder and heavy metal pollution caused by a metal chloride is inhibited.