| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve controllability of dv/dt by a gate drive circuit during a turn-on switching period while maintaining a low loss and a high blocking voltage. <P>SOLUTION: A semiconductor device comprises a first semiconductor layer 4 of a first conductivity type, a second semiconductor layer 2 of a second conductivity type formed near a surface of the first semiconductor layer 4, a first main electrode 11 electrically connected to the second semiconductor layer 2, a third semiconductor layer 6 of the second conductivity type formed near a surface adjacent to the first semiconductor layer on the side opposite to the second semiconductor layer 2, a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer 6, a second main electrode 14 electrically connected to the third semiconductor layer 6 and the fourth semiconductor layer 7, a trench 17 with side faces contacting the fourth semiconductor layer and the third semiconductor layer 6, respectively, and reaching the first semiconductor layer 4, a gate electrode 9 formed by a polysilicon sidewall along the side faces of the trench 17, and a polysilicon electrode 18 provided in the trench 17 away from the gate electrode 9 and electrically connected to the second main electrode 14. <P>COPYRIGHT: (C)2012,JPO&INPIT |
