发明名称 GALLIUM NITRIDE MOLDED ARTICLE AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a gallium nitride molded article having a low resistance and a high density, and to provide a gallium nitride sputtering target which allows direct current sputtering. <P>SOLUTION: A gallium metal-permeated gallium nitride molded article is characterized in that gallium nitride and gallium metal exist as different phases in the molded article, and the molar ratio of Ga/(Ga + N) in the whole molded article is 55-80%. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012144805(A) 申请公布日期 2012.08.02
申请号 JP20110278931 申请日期 2011.12.20
申请人 TOSOH CORP 发明人 MESHIDA MASAMI;MATSUMARU KEITARO;TAKAHASHI KOYATA;KIKUCHI RYO;SHIBUTAMI TETSUO
分类号 C23C14/34;C04B35/58;C30B23/02;C30B29/38 主分类号 C23C14/34
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