| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing solution which can improve a polishing speed of a film to be polished and improve surface flatness after polishing in a CMP technology for flattening an interlayer insulation film and the film to be polished such as a BPSG film, an STI film, and the like. <P>SOLUTION: A polishing solution for CMP contains a cerium oxide particle, a p-toluenesulfonic acid, a high-molecular compound B having a carboxylic acid group or carboxylate salt group, and water. A content of the p-toluenesulfonic acid is 0.001-1 wt% of total mass of the polishing solution. A content of the high-molecular compound B is 0.01-0.50 wt% of total mass of the polishing solution and pH is 4.0 or more and 7.0 or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
