| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device which can be improved in operation speed, and its operation method. <P>SOLUTION: A voltages is applied so as to perform setting operation on storage elements 21 in memory cells 20nn positioned on one word line WLn and also to perform resetting operation on storage elements 21 in memory cells 20n(n+1) positioned on the word line WLn. Namely, a predetermined word line potential Vwl_reset is applied to the word line WLn first, and the potential of a bit line BL1n on a low-potential side corresponding to the storage elements 21 in the memory cells 20nn is set to be higher by a predetermined potential difference ΔV than the potential of a bit line BL2(n+1) on a low-potential side corresponding to the storage elements 21 in the memory cells 20n(n+1). The resetting operation and resetting operation can be performed simultaneously (in parallel) on arbitrary (pluralities of) memory cells 20nn, 20n(n+1) positioned on the same word line WLn. <P>COPYRIGHT: (C)2012,JPO&INPIT |
