| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress electrostatic breakdown of a transistor. <P>SOLUTION: A method for manufacturing an electro-optic device has steps of: forming a first transistor on a substrate; forming a first insulation film on the substrate on which the first transistor is formed; etching the first insulation film to form a first through hole connecting to the first transistor; forming a first conductor film having a first part which is connected to the first transistor via the first through hole and a second part which is not connected to the first part on the first insulation film ; forming a second insulation film on the first conductor film; etching the second insulation film to form a second through hole and a third through hole connecting to each of the first part and the second part of the first conductor film; and forming a second conductor film for electrically connecting the first part and the second part of the first conductor film through the second through hole and the third through hole on the second insulation film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
